unisonic technologies co., ltd 13003adg preliminary npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2014 unisonic technologies co., ltd qw-r223-023.c npn silicon power transistor ? description these devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220v applications in switch mode. ? features * reverse biased soa with inductive load @ t c =100c * inductive switching matrix 0.5 ~ 1.5 amp, 25 and 100c typical t c = 290ns @ 1a, 100c. * 700v blocking capability ? applications * switching regulator?s, inverters * motor controls * solenoid/relay drivers * deflection circuits ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13003adgl-tm3-t 13003adgp-tm3-t to-251 b c e tube 13003ADGL-T60-F-K 13003adgp-t60-f-k to-126 b c e bulk 13003adgl-t92-f-b 13003adgp-t92-f-b to-92 b c e tape box 13003adgl-t92-f-k 13003adgp-t92-f-k to-92 b c e bulk note: pin assignment: b: base c: collector e: emitter (1) t: tube, b: bluk, k: bulk (2) refer to pin assignment (3) tm3: to-251, t60: to-126, t92: to-92 (4) l: lead free, p: halogen free 13003adgl -t60 -f -b (1)packing type (2)pin assignment (3)package type (4)lead free
13003adg preliminary npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r223-023.c ? marking package marking to-251 to-126 to-92
13003adg preliminary npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r223-023.c ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo ( sus ) 400 v collector-base voltage v cbo 700 v emitter base voltage v ebo 9 v collector current continuous i c 1.5 a peak (1) i cm 3 base current continuous i b 0.75 a peak (1) i bm 1.5 emitter current continuous i e 2.25 a peak (1) i em 4.5 power dissipation t a =25c to-126 p d 1.4 w to-92 1.1 w to-251 1.56 w t c =25c to-126 20 w to-92 1.5 w to-251 25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied.
13003adg preliminary npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r223-023.c ? electrical characteristics (t c =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics (note) collector-emitter sustaining voltage v ceo ( sus ) i c =10ma , i b =0 400 v collector cutoff current t c =25c i ceo v ceo =rated value, v be(off) =1.5 v 1 ma t c =100c 5 emitter cutoff current i ebo v eb =9v, i c =0 1 ma second breakdown second breakdown collector current with bass forward biased is/b see fig.5 clamped inductive soa with base reverse biased rb soa see fig.6 on characteristics (note) dc current gain h fe1 i c =0.5a, v ce =5v 14 57 h fe2 i c =1a, v ce =5v 5 30 collector-emitter satu ration voltage v ce(sat) i c =0.5a, i b =0.1a 0.5 v i c =1a, i b =0.25a 1 i c =1.5a, i b =0.5a 3 i c =1a, i b =0.25a, t c =100c 1 base-emitter satura tion voltage v be(sat) i c =0.5a, i b =0.1a 1 v i c =1a, i b =0.25a 1.2 i c =1a, i b =0.25a, t c =100c 1.1 dynamic characteristics current-gain-bandwidth product f t i c =100ma, v ce =10v, f=1mhz 4 10 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 21 pf switching characteristics resistive load (table 1) delay time t d v cc =125v, i c =1a, b1 =i b2 =0.2a, t p =25 s, duty cycle 1% 0.05 0.1 s rise time t r 0.5 1 s storage time t s 2 4 s fall time t f 0.4 0.7 s inductive load, clamped (table 1) storage time t stg i c =1a, v clamp =300v, i b1 =0.2a, v be(off) =5v dc , t c =100c 1.7 4 s crossover time t c 0.29 0.75 s fall time t f 0.15 s diode forward voltage v f i f =0.5a 1.5 v note: pulse test: pw=300 s, duty cycle 2%
13003adg preliminary npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r223-023.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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